| 1. | Negative resistance effect
负阻效应 |
| 2. | Current research of the technique of ga diffusion and the negative resistance effect of open - tube ga - diffusion transistor are emphasized
重点介绍了目前开管ga扩散工艺的发展现状和开管扩镰晶体管负阻效应的研究现状。 |
| 3. | Even though much has been devoted to the research of it , the mechanism of the negative resistance effect and the effective means to reduce it are rarely reported
尽管前人对负阻现象作了不少研究，但负阻存在的机理、减小负阻的有效措施等问题却鲜见报道。 |
| 4. | Yet the outstanding shortcoming of open - tube ga diffusion is the apparent negative resistance effect in the ic - vce characteristic curve , which is not what we hope
尽管如此开管扩镓的突出缺点是在特性曲线中的负阻效应较为明显，负阻现象的存在是我们不希望的。 |
| 5. | So to understand the negative resistance effect mechanism existing in the base - region of high - reverse - voltage transistor has great theory values and extensive application potential
因此搞清镓基区高反压晶体管负阻of存在的机理，具有重大的理论价值，潜在着广阔的应用前景。 |
| 6. | All the experiment analyses are presented in chapter 3 , including the lodging of negative resistance effect based on the measurement of the parameters of ga - diffusion trans
结构中近硅表面微区域浓度的变化规律， ga扩散过程的三个阶段包括预沉积、再分布和二次氧化，对应于ga在a |
